VIGO SYSTEM S.A.

Products

PVMI



8-11 μm IR PHOTOVOLTAIC MULTIPLE JUNCTION DETECTORS OPTICALLY IMMERSED

Description

The PVMI-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR multiple junction optically immersed photovoltaic detector.

The devices are optimized for the maximum performance at λopt. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing.

Standard detectors are available in TO39 or BNC packages without windows. Various windows, other packages and connectors are available upon request.

  • Ambient temperature operation
  • No bias required
  • Short time constant
  • No flicker noise
  • Operation from DC to VHF
  • Perfect match to fast electronics
  • Wide dynamic range
  • Large area devices
  • Low cost
  • Custom design upon request
Parameter
Symbol
Unit
PVMI-8
PVMI-10.6
Optimal Wavelength
λopt
µm
8
10.6
Detectivity*):
peak
opt
D*
cm⋅Hz1/2⋅W-1
≥6.0×108
≥3.0×108
≥2.0×108
≥1.0×108
Current Responsivity - Width Product
@ λopt, 1×1mm
Ri⋅w
A⋅mm⋅W-1
≥0.04
≥0.01
Time Constant
τ
ns
≤4
≤1.5
Resistance
R
Ω
50 to 300
20 to 150
Operating Temperature
T
K
~300
Acceptance Angle, F/#
Φ, -
deg, -
36, 1.62

*) Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

 

Type
Optical Area [mm×mm]
0.025×0.025
0.05×0.05
0.1×0.1
0.2×0.2
0.25×0.25
0.5×0.5
1×1
2×2
3×3
4×4
PVMI-8
 
 
 
 
O
O
X
X
 
 
PVMI-10.6
 
 
 
 
O
O
X
X
 
 

X - standard detectors
O - detectors available upon request, parameters may vary from these in Data Sheet