Detektory Podczerwieni i Moduły

IR Detectors

VIGO System S.A. detectors are optimized for any wavelength within the spectral range 2 to 12 µm. The detectors are characterized by high detectivity and excellent speed of response. Uncooled devices are our leading line. For more demanding applications, thermoelectric (TE) coolers may be necessary. High performance of our detectors have been achieved thanks to newly developed unique technologies. The technologies include:

• Sophisticated mercury cadmium telluride (MCT) epitaxial techniques
• Energy gap engineering
• Complex 3D architecture of IR devices
• Multiple-cell photovoltaic devices
• Monolithic integration of detectors with microoptics

Available types of detectors

TE Cooled Detectors

• PV-2TE 2-12 µm IR photovoltaic detectors, thermoelectrically cooled
• PV-3TE 3-12 µm IR photovoltaic detectors, thermoelectrically cooled
• PV-4TE 2-12 µm IR photovoltaic detectors, thermoelectrically cooled
• PVI-2TE 2-12 µm IR photovoltaic detectors, thermoelectrically cooled, optically immersed
• PVI-3TE 2-12 µm IR photovoltaic detectors, thermoelectrically cooled, optically immersed
• PVI-4TE 2-13 µm IR photovoltaic detectors, thermoelectrically cooled, optically immersed
• PVM-2TE 8-11 µm IR photovoltaic detectors, multiple junction, thermoelectrically cooled
• PVMI-2TE 8-11 µm IR photovoltaic detectors, multiple junction, thermoelectrically cooled, optically immersed
• PVMI-3TE 8-11 µm IR photovoltaic detectors, multiple junction, thermoelectrically cooled, optically immersed
• PC-2TE 2-13 µm IR photoconductive detectors, thermoelectrically cooled
• PCI-2TE 2-14 µm IR photoconductive detectors, thermoelectrically cooled, optically immersed
• PCI-3TE 2-14 µm IR photoconductive detectors, thermoelectrically cooled, optically immersed

Uncooled Detectors

• PV 3-8 µm IR photovoltaic detector
• PVI 2-8 µm IR photovoltaic detectors, optically immersed
• PVM 8-11 µm IR photovoltaic, multiple junction detectors
• PVMI 8-11 µm IR photovoltaic, multiple junction detectors, optically immersed
• PC 2-11µm IR photoconductors
• PCI 2-11 µm IR photoconductors, optically immersed
• PEM 10.6 µm Photoelectromagnetic IR detectors, optically immersed and flat
• PEMI 10.6 µm Photoelectromagnetic IR detectors, optically immersed and flat
• PCQ 2-11 µm IR Photoconductors quadrant geometry