PVMI-2TE series

Photovoltaic multiple junction detectors thermoelectrically cooled optically immersed

Features

• High performance in the 2 to 11 µm range without LN₂-cooling!
• Fast response
• No flicker noise
• Convenient to use
• Wide dynamic range
• Compact, rugged and reliable
• Low cost
• Prompt delivery
• Custom design upon request

Description

The PVMI-2TE-n series (where n is wavelength λop, in micrometers, to which the detector is optimized) photodetectors are two-stage TE-cooled IR photovoltaic detectors, which have been optically immersed to high refractive index GaAs or CdZnTe hemispherical or hyperhemispherical lenses. These devices can be optimized for the maximum performance for long wavelength, large area devices. High performance and stability were achieved by using a newly developed variable gap semiconductors (HgCdZn)Te, optimized composition/doping profiles and improved surface processing. Standard detectors are available in modified TO-8 packages with BaF2 windows. Other packages and windows are available upon request. See application notes for more details. Custom devices with quadrant cells, multielement arrays, specialized packages, connectors, windows and optical filters are available on request.