New PV Series of infrared photodetectors
We have migrated from the old PD series to a new PV devices that are characterized by better detectivity, close to theoretical limitations, and much faster response, up to GHz range. The devices are based on more complex variable HgCdZnTe structures grown with advanced ISOVPE/MOCVD epitaxial technique and new processing. The operation of the device is quite complex and cannot be simply related to photodiodes nor photoconductive devices. The devices can operate at zero bias or with reverse bias for fast response applications. Current mode will ensure better performance, faster response and less dependence on temperature changes and ageing effects. The devices are operating at ambient temperatures or with Peltier coolers. Some are supplied with immersion microlenses to improve performance and speed of operation.