Features
Descriptions
The PVI-n (where n is optimal wavelength (λop), in micrometers, to which the detector is optimized) series photodetectors are IR photovoltaic detectors, which have been optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 8 µm range. High performance and stability are achieved by using band gap engineered (HgCdZn)Te structures of optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.
Standard detectors are available in modified TO-39 or BNC-based packages with out window. Other packages, and connectors are available upon request. See application notes for more details.
Multiple cells connected in series (PVMI-n) are preferable for large area devices. They are characterized by similar D*, larger resistance (for better PA integration) and lower Ri.