Features
Description
The PV-n (where n is optimal wavelength (λop), in micrometers, to which the detector is optimized) series photodetectors are IR photovoltaic detectors. These devices can be optimized for the maximum performance anywhere within 3 to 8 µm range. High performance and stability are achieved by using a variable gap (HgCdZn)Te structures of optimized doping and surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.
Standard detectors are available in modified TO-39 or BNC-based windowless packages. Other packages, windows and connectors are available upon request. See application notes for more details.
Multiple cells connected in series (PVM-n) are preferable for large area devices. They are characterized by similar D*, larger resistance (for better PA integration) and lower Ri.