PCI-3TE series

Photoconductors thermoelectrically cooled, optically immersed

Features

• High performance in the 2-14 µm range

• Fast response

• Convenient to use

• Wide dynamic range

• Compact, rugged and reliable

• Low cost

• Prompt delivery

• Custom design upon request

Description

PCI-3TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature three-stage thermoelectrical cooler IR photoconductive detector, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transittance (~0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request.

Standard detectors are available in TO-8 packages with BaF2 windows. Other packages, windows and connectors are also available.