The PCI-n (where n is wavelength λop, in micrometers, to which the detector is optimized) series photodetectors are uncooled IR photoconductors, which have been optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 11 µm range. High performance and stability were achieved by using a band gap engineered (HgCdZn)Te, structures with optimized composition/doping profiles and improved surface processing.
Custom devices with quadrant cells, multielement arrays, specialized packages, connectors, windows and optical filters are available on request.