The PC-n (where n is wavelength λop in micrometers, to which the detector is optimized) series are high speed, ambient temperature photoconductive mode IR photodetectors. These devices can be optimized for the maximum performance anywhere from 2 to 11 µm. High performance and stability were achieved by using band gap engineered (HgCdZn)Te structures with optimized composition/doping profiles and improved surface processing. They are housed in rugged packages of reduced size and weight. Performance data are provided with each detector.
The detectors are well suited for heterodyne detection due to a very short time constant and to the perfect match to fast electronics.
Custom devices with quadrant cells, multielement arrays, specialized packages, connectors, windows and optical filters are available on request.