List

Multispectral IR uncooled photoconductors

Features

• Wide spectral range (0.5 to 12 µm)
• D*(1.06 µm) up to 1*10⁸ cmHz^1/2/W
• D*(10.6 µm) up to 4*10⁶ cmHz^1/2/W
• Response time of 1 ns (for 10.6 µm)
• High output signal
• Perfect match to fast electronics
• Lightweight, rugged and reliable
• Convenient to use
• Low cost
• Custom design upon request

Description

Spectral response optimized for maximum performance at two wavelengths 1.06 and 10.6 µm. Devices are typically mounted in modified TO-39-style packages with ZnSe windows or without any window. Specialized packages with other connectors and windows are available upon request.

Features

• Ambient temperature operation
• No bias required
• Short time constant
• No flicker noise
• Operation from DC to VHF
• Perfect match to fast electronics
• Wide dynamic range
• Low cost
• Custom design upon request

Description

The PV-n (where n is optimal wavelength (λop), in micrometers, to which the detector is optimized) series photodetectors are IR photovoltaic detectors. These devices can be optimized for the maximum performance anywhere within 3 to 8 µm range. High performance and stability are achieved by using a variable gap (HgCdZn)Te structures of optimized doping and surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.

Standard detectors are available in modified TO-39 or BNC-based windowless packages. Other packages, windows and connectors are available upon request. See application notes for more details.

Multiple cells connected in series (PVM-n) are preferable for large area devices. They are characterized by similar D*, larger resistance (for better PA integration) and lower Ri.

Photovoltaic detectors, thermoelectrically cooled

Features

• High performance in the 2-12 µm range
• Fast response
• No flicker noise
• Convenient to use
• Wide dynamic range
• Compact, rugged and reliable
• Low cost
• Prompt delivery
• Custom design upon request

Description

The PV-2TE-n (where n is optimal wavelength (λop), in micrometers, to which the detector is optimized) series photodetectors are two-stage TE-cooled IR photovoltaic detectors. These devices can be optimized for the maximum performance anywhere within 2 to 12 µm range. High performance and stability are achieved by using band gap engineered (HgCdZn)Te structures of optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.

Standard detectors are available in modified TO-8 packages with BaF2 windows. Other packages, and connectors are available upon request. See application notes for more details.

Multiple cells connected in series (PVM-2TE-n) are preferable for large area devices. They are characterized by similar D*, larger resistance (for better PA integration) and lower Ri.

Features

• High performance in the 2-11 µm range
• Fast response
• No flicker noise
• Convenient to use
• Wide dynamic range
• Compact, rugged and reliable
• Low cost
• Custom design upon request

Description

The PV-3TE-n (where n is optimal wavelength (λop), in micrometers, to which the detector is optimized) series photodetectors are three-stage TE-cooled IR photovoltaic detectors. These devices can be optimized for the maximum performance anywhere within 3 to 12 µm range. High performance and stability are achieved by using band gap engineered (HgCdZn)Te structures of optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.

Standard detectors are available in modified TO-8 packages with BaF2 windows. Other packages, and connectors are available upon request. See application notes for more details.

Multiple cells connected in series are preferable for large area devices. They are characterized by similar D*, larger parallel resistance and lower Ri.

Features

• High performance in the 2-12 µm range
• No flicker noise
• Convenient to use
• Wide dynamic range
• Compact, rugged and reliable
• Low cost
• Prompt delivery
• Custom design upon request

Description

The PV-4TE-n (where n is optimal wavelength (λop), in micrometers, to which the detector is optimized) series photodetectors are four-stage TE-cooled IR photovoltaic detectors. These devices can be optimized for the maximum performance anywhere within 2 to 12 µm range. High performance and stability were achieved by using band gap engineered (HgCdZn)Te structures of optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.

Standard detectors are available in modified TO-8 packages with BaF2 windows. Other packages, windows and connectors are available upon request. See application notes for more details.

Multiple cells connected in series are preferable for large area devices. They are characterized by similar D*, larger parallel resistance and lower Ri.

Features

• Ambient temperature operation
• No bias required
• Short time constant
• No flicker noise
• Operation from DC to VHF
• Perfect match to fast electronics
• Wide dynamic range
• Low cost
• Custom design upon request

Descriptions

The PVI-n (where n is optimal wavelength (λop), in micrometers, to which the detector is optimized) series photodetectors are IR photovoltaic detectors, which have been optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 8 µm range. High performance and stability are achieved by using band gap engineered (HgCdZn)Te structures of optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.

Standard detectors are available in modified TO-39 or BNC-based packages with out window. Other packages, and connectors are available upon request. See application notes for more details.

Multiple cells connected in series (PVMI-n) are preferable for large area devices. They are characterized by similar D*, larger resistance (for better PA integration) and lower Ri.

Features

• High performance in the 2-12 µm range
• Fast response
• No flicker noise
• Convenient to use
• Wide dynamic range
• Compact, rugged and reliable
• Low cost
• Prompt delivery
• Custom design upon request

Descriptions

The PVI-2TE-n (where n is optimal wavelength (λop), in micrometers, to which the detector is optimized) series photodetectors are two-stage TE-cooled IR photovoltaic detectors, which have been optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 12 µm range. High performance and stability are achieved by using a variable gap (HgCdZn)Te structures of optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.

Standard detectors are available in modified TO-8 packages with BaF2 windows. Other packages, and connectors are available upon request. See application notes for more details.

Multiple cells connected in series (PVMI-2TE-n) are preferable for large area devices. They are characterized by similar D*, larger resistance (for better PA integration) and lower Ri.

Features

• High performance in the 2-12 µm range
• Fast response
• No flicker noise
• Convenient to use
• Wide dynamic range
• Compact, rugged and reliable
• Low cost
• Prompt delivery
• Custom design upon request

Descriptions

The PVI-3TE-n (where n is optimal wavelength (λop), in micrometers, to which the detector is optimized) series photodetectors are three-stage TE-cooled IR photovoltaic detectors, which have been optically immersed to high refractive index GaAs (or CdZnTe) hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 12 µm range. High performance and stability were achieved by using band gap engineered (HgCdZn)Te structures of optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.

Standard detectors are available in modified TO-8 packages with BaF2 windows. Other packages, windows and connectors are available upon request. See application notes for more details.

Multiple cells connected in series are preferable for large area devices. They are characterized by similar D*, larger parallel resistance and lower Ri.

Features

• High performance in the 2-13 µm range
• Fast response
• No flicker noise
• Convenient to use
• Wide dynamic range
• Compact, rugged and reliable
• Low cost
• Prompt delivery
• Custom design upon request

Descriptions

The PVI-4TE-n (where n is optimal wavelength (λop), in micrometers, to which the detector is optimized) series photodetectors are four-stage TE-cooled IR photovoltaic detectors, which have been optically immersed to high refractive index GaAs (or CdZnTe) hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 13 µm range. High performance and stability were achieved by using band gap engineered (HgCdZn)Te structures of optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.

Standard detectors are available in modified TO-8 packages with BaF2 windows. Other packages, windows and connectors are available upon request. See application notes for more details.

Multiple cells connected in series are preferable for large area devices. They are characterized by similar D*, larger parallel resistance and lower Ri.

Features

• Ambient temperature operation
• Wide dynamic range
• Perfect match to fast electronics
• Convenient to use
• Low cost
• Prompt delivery
• Custom design upon request

Descriptions

The PC-n (where n is wavelength λop in micrometers, to which the detector is optimized) series are high speed, ambient temperature photoconductive mode IR photodetectors. These devices can be optimized for the maximum performance anywhere from 2 to 11 µm. High performance and stability were achieved by using band gap engineered (HgCdZn)Te structures with optimized composition/doping profiles and improved surface processing. They are housed in rugged packages of reduced size and weight. Performance data are provided with each detector.

The detectors are well suited for heterodyne detection due to a very short time constant and to the perfect match to fast electronics.

Custom devices with quadrant cells, multielement arrays, specialized packages, connectors, windows and optical filters are available on request.