PCI series

Photoconductors optically immersed

Features

• Ambient temperature operation
• D*(10.6 µm) up to 6*10⁷ cmHz^1/2/W
• Response time of 1 ns or less
• Wide dynamic range
• Perfect match to fast electronics
• Convenient to use
• Low cost
• Prompt delivery
• Custom design upon request

Description

The PCI-n series (where n is wavelength λop, in micrometers, to which the detector is optimized) photodetectors are uncooled IR photoconductors, which have been optically immersed to high refractive index GaAs (or CdZnTe) hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 12 µm range. High performance and stability were achieved by using a newly developed variable gap semiconductors (HgCdZnTe), optimized composition/doping profiles and improved surface processing. Custom devices with quadrant cells, multielement arrays, specialized packages, connectors, windows and optical filters are available on request.