List

Multispectral IR uncooled photoconductors

Features

• Wide spectral range (0.5 to 12 µm)
• D*(1.06 µm) up to 1*10⁸ cmHz^1/2/W
• D*(10.6 µm) up to 4*10⁶ cmHz^1/2/W
• Response time of 1 ns (for 10.6 µm)
• High output signal
• Perfect match to fast electronics
• Lightweight, rugged and reliable
• Convenient to use
• Low cost
• Custom design upon request

Description

Spectral response optimized for maximum performance at two wavelengths 1.06 and 10.6 µm. Devices are typically mounted in modified TO-39-style packages with ZnSe windows or without any window. Specialized packages with other connectors and windows are available upon request.

Photovoltaic uncooled detectors

Features

• Ambient temperature operation
• No bias required
• Short response time
• No flicker noise
• Operation from DC to VHF
• Perfect match to fast electronics
• Wide dynamic range
• Low cost
• Custom design upon request

Description

The PV-n series (where n is wavelength λop, in micrometers, to which the detector is optimized) photodetectors are IR photovoltaic detectors. These devices can be optimized for the maximum performance anywhere within 2 to 11 µm range. High performance and stability were achieved by using a variable gap (HgCdZn)Te semiconductors, optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request. Standard detectors are available in modified TO-39 or BNC-based packages with no windows. Other packages, windows and connectors are available upon request. See application notes for more details.

Photovoltaic detectors, thermoelectrically cooled

Features

• High performance in the 2 to 11 µm range without LN₂-cooling!
• Fast response
• No flicker noise
• Convenient to use
• Wide dynamic range
• Compact, rugged and reliable
• Low cost
• Prompt delivery
• Custom design upon request

Description

The PV-2TE-n series (where n is wavelength λop, in micrometers, to which the detector is optimized) photodetectors are two-stage TE-cooled IR photovoltaic detectors. These devices can be optimized for the maximum performance anywhere within 2 to 11 µm range. High performance and stability were achieved by using a variable gap (HgCdZn)Te semiconductors, optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request. Standard detectors are available in modified TO-8 packages with BaF₂ windows. Other packages, windows and connectors are available upon request. See application notes for more details.

Photovoltaic, optically immersed detectors

Features

• Ambient temperature operation
• No bias required
• Short response time
• No flicker noise
• Operation from DC to VHF
• Perfect match to fast electronics
• Wide dynamic range
• Low cost
• Custom design upon request

Description

The PVI-n series (where n is wavelength λop, in micrometers, to which the detector is optimized) photodetectors are IR photovoltaic detectors, which have been optically immersed to high refractive index GaAs (or CdZnTe) hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 11 µm range. High performance and stability were achieved by using a variable gap (HgCdZn)Te semiconductors, optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request. Standard detectors are available in modified TO-39 or BNC-based packages with no windows. Other packages, windows and connectors are available upon request. See application notes for more details.

Photovoltaic detectors, thermoelectrically cooled, optically immersed

Features

• High performance in the 2 to 11 µm range without LN₂-cooling!
• Fast response
• No flicker noise
• Convenient to use
• Wide dynamic range
• Compact, rugged and reliable
• Low cost
• Prompt delivery
• Custom design upon request

Description

The PVI-2TE-n series (where n is wavelength λop, in micrometers, to which the detector is optimized) photodetectors are two-stage TE-cooled IR photovoltaic detectors, which have been optically immersed to high refractive index GaAs (or CdZnTe) hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 11 µm range. High performance and stability were achieved by using a variable gap (HgCdZn)Te semiconductors, optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.

Standard detectors are available in modified TO-8 packages with BaF₂ windows. Other packages, windows and connectors are available upon request. See application notes for more details.

Photovoltaic detectors, thermoelectrically cooled, optically immersed

Features

• High performance in the 2 to 12 µm range without LN₂-cooling!
• Fast response
• No flicker noise
• Convenient to use
• Wide dynamic range
• Compact, rugged and reliable
• Low cost
• Prompt delivery
• Custom design upon request

Description

The PVI-3TE-n series (where n is wavelength λop, in micrometers, to which the detector is optimized) photodetectors are three-stage TE-cooled IR photovoltaic detectors, which have been optically immersed to high refractive index GaAs (or CdZnTe) hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 12 µm range. High performance and stability were achieved by using a variable gap (HgCdZn)Te semiconductors, optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.

Standard detectors are available in modified TO-8 packages with BaF₂ windows. Other packages, windows and connectors are available upon request. See application notes for more details.

Photoconductors

Features

• Ambient temperature operation
• D*(10.6 µm) up to 6*10⁶ cmHz^1/2/W
• Response time of 1 ns or less
• Wide dynamic range
• Perfect match to fast electronics
• Convenient to use
• Low cost
• Prompt delivery
• Custom design upon request

Description

The PC-n series (where n is wavelength λop, in micrometers, to which the detector is optimized) are high speed, ambient temperature photoconductive mode IR photodetectors. These devices can be optimized for the maximum performance anywhere from 2 to 12 µm. High performance and stability were achieved by using a newly developed variable gap semiconductors (HgCdZn)Te, optimized composition/doping profiles and improved surface processing. They are housed in rugged packages of reduced size and weight. Performance data are provided with each detector. The detectors are well suited for heterodyne detection of radiation at high frequencies due to a very short response time and to the perfect match to fast electronics. Custom devices with quadrant cells, multielement arrays, specialized packages, connectors, windows and optical filters are available on request.

Photoconductors optically immersed

Features

• Ambient temperature operation
• D*(10.6 µm) up to 6*10⁷ cmHz^1/2/W
• Response time of 1 ns or less
• Wide dynamic range
• Perfect match to fast electronics
• Convenient to use
• Low cost
• Prompt delivery
• Custom design upon request

Description

The PCI-n series (where n is wavelength λop, in micrometers, to which the detector is optimized) photodetectors are uncooled IR photoconductors, which have been optically immersed to high refractive index GaAs (or CdZnTe) hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 12 µm range. High performance and stability were achieved by using a newly developed variable gap semiconductors (HgCdZnTe), optimized composition/doping profiles and improved surface processing. Custom devices with quadrant cells, multielement arrays, specialized packages, connectors, windows and optical filters are available on request.

Photoconductors thermoelectrically cooled

Features

• High performance in the
• 2 to 14 µm range without LN₂-cooling
• Fast response
• Convenient to use
• Perfect match to fast electronics
• Wide dynamic range
• Compact, rugged and reliable
• Low cost
• Prompt delivery
• Custom design upon request

Description

The PC-2TE-n series (where n is wavelength λop, in micrometers, to which the detector is optimized) photodetectors are two-stage TE-cooled IR photoconductive detectors, which have been optically immersed to high refractive index GaAs (or CdZnTe) hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 14 µm range. High performance and stability were achieved by using a variable gap (HgCdZn)Te semiconductors, optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.

Standard detectors are available in modified TO-8 packages with BaF₂ windows. Other packages, windows and connectors are available upon request. See application notes for more details.

Photoconductors thermoelectrically cooled, optically immersed

Features

• High performance in the
• 2 to 14 µm range without LN₂-cooling
• Fast response
• Convenient to use
• Perfect match to fast electronics
• Wide dynamic range
• Compact, rugged and reliable
• Low cost
• Prompt delivery
• Custom design upon request

Description

The PCI-2TE-n series (where n is wavelength λop, in micrometers, to which the detector is optimized) photodetectors are two-stage TE-cooled IR photoconductive detectors, which have been optically immersed to high refractive index GaAs (or CdZnTe) hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 14 µm range. High performance and stability were achieved by using a variable gap (HgCdZn)Te semiconductors, optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.

Standard detectors are available in modified TO-8 packages with BaF₂ windows. Other packages, windows and connectors are available upon request. See application notes for more details.